Applied Materials Centura 5200

• Epi thickness: <25um
• Single wafer processing
• Reduced & Atmospheric Pressure
• Silicon Source Gas: TCS or DCS
• Wafer Diameters: 125mm, 150mm, and 200mm
• Dopant species: Boron, Phosphorus, Arsenic
• Epi resistivity: 0.01 Ohm-cm to intrinsic resistivity
• Layer Uniformities: < 2.0%
• Multi Layer / Ramped Layer

CSD EpiPro 5000

• Epi thickness: 5 – 150um
• Batch Processing
• Wafer Diameters: 100mm, 125mm, and 150mm
• Atmospheric Pressure
• Silicon Source Gas: TCS
• Dopant species: Boron, Phosphorus, Arsenic
• Epi resistivity: 0.01 Ohm-cm to intrinsic resistivity
• Layer Uniformities: < 5.0%
• Multi Layer / Ramped Layer